2D quantum memory device reaches single-electron limit of information storage
Most electronic memory storage devices require the ability to trap large numbers of electrons for each bit of memory. In an ideal world, however, it would take only one electron. This would reduce space requirements and power consumption for devices. Now, a team in China has real
Most electronic memory storage devices require the ability to trap large numbers of electrons for each bit of memory. In an ideal world, however, it would take only one electron. This would reduce space requirements and power consumption for devices. Now, a team in China has real This story matters for Science & Discovery readers tracking student. Reported by phys.org. Read the full original at the source link below.
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